摘要
化学镀镍磷合金镀层的耐蚀性已很难满足现代工业日益提高的防腐蚀要求,为提高其综合性能,拓宽应用范围,在化学镀镍磷合金液中加入硫酸铜和氯化铬制备镍铜铬磷四元合金镀层,优选出最佳工艺条件为:15g/L硫酸镍,40g/L次磷酸钠,0.2g/L硫酸铜,0.5g/L钼酸钠,0.5mg/L稳定剂(由含氮有机化合物或含碘化合物配制而成),40g/L配位剂(以一种多羟基羧酸作主配位剂,一种多元羧酸作辅助配位剂),20g/L乙酸钠,10g/L三氯化铬,表面活性剂(聚乙二醇和含氟表面活性剂)适量,pH值4.0～5.0,温度80～90℃,时间20min。研究了镀液中主要成分和工艺条件对合金镀层外观、沉积速度、耐蚀性的影响。检测了化学镀Ni Cu Cr P合金镀层的性能,镀层中含8%～9%Cr,2%～3%Cu,78%～85%Ni。结果表明,所得的镍铜铬磷四元合金镀层结晶细致,达镜面光亮,其耐蚀性、孔隙率和硬度等性能均优于化学镀镍磷合金层。
The corrosion resistance of electroless nickelphosphorus alloy plating is unsatisfactory in modern industry.Thus electroless nickelcopperchromiumphosphorus alloy plating was developed to improve the comprehensive properties of the NiP alloy plating so as to extend its applications in industry.The effects of the bath composition and operating condition on the appearance, deposition rate, and corrosion resistance of the target NiCrCuP alloy deposit were studied, and the properties of the alloy deposit were investigated as well. As the results, it was feasible to deposit the NiCrCuP alloy deposit by adding cupric sulfate and chromium chloride in the traditional electroless NiP plating bath.The optimized formulation of the plating bath was determined to be 15 g/L NiSO_(4), 40 g/L NaPO_(2), 0.2 g/L (CuSO_4), 0.5 g/L (Na_2MoO_4), 0.5 g/L stabilizing agent (nitrogencontaining organic compound or iodinecontaining compound), 40 g/L complexing agent (polyhydroxycarboxylic acid and polybasic carboxylic acid),20 g/L (CH_3COONa),10 g/L (CrCl_3),and a proper amount of surfactant (polyethylene glycol and fluorinecontaining surfactant).The optimal plating parameters were determined to be pH 4.0~5.0,temperature 80~90 ℃,and a duration of 20 min.The target (NiCrCuP) alloy deposit was composed of8%~9%Cr,2%~3%Cu,and78%~85%Ni,and it was superior to the conventional NiP plating in terms of the fine grain structure,brightness,corrosion resistance,porosity,and hardness.
出处
《材料保护》
CAS
CSCD
北大核心
2005年第4期28-31,共4页
Materials Protection
关键词
化学镀
镍-铜-铬-磷合金
耐蚀性
沉积速度
electroless plating
Ni-Cr-Cu-P alloy
corrosion resistance
deposition rate
