摘要
俄歇电子谱（AES）要成为样品定量分析的手段，必须考虑背散射电子与俄歇电子平均逃逸深度对俄歇电子产额的影响。本文提出一种对固体中低能电子背散射过程的简化模型，并进行蒙特卡罗计算机模拟研究，以确定背散射因子的方法，不仅可减少计算时间又能保持必要的精度，而且具有不依赖于实验测量误差的优点。以铜、银材料为实例，所得的背散射因子与文献报道相符，表明所采用的简化模型是合理的。
The backscattering factor R_B and inelestic mean free path (IMFP) correction must be taken into account in the quantitative analysis by Auger electron spectroscopy (AES). A calculation method of backscattering factor R_Bfor bulk material's AES by Monte Carlo simulation is presented in this paper. A simplified physical scattering model was used in our calculations. This method can not only save the calculation time but also keep higher accuracy. The R_B of Cu and Ag were calculated.
出处
《真空科学与技术》
CSCD
1994年第2期95-102,共8页
Vacuum Science and Technology
关键词
材料
表面
俄歇电子谱
蒙特卡罗法
Low energy electron scattering, AES's backscattering factor,Monte Carlo simulation
