摘要
介绍了硅场致发射阵列工艺研究的初步结果。应用湿法化学腐蚀、硅锥切削及介质平坦化技术成功地制备出了理想形状的场致发射阵列。
The first stages and experimental results of process investigation of silicon field emission arrays are described. Ideally shaped field emission arrays have been successfully formed by using wet chemical etching, tip sharpening and dielectric planarization.
出处
《真空科学与技术》
CSCD
1994年第2期129-132,共4页
Vacuum Science and Technology
关键词
场致发射阵列
硅
阴极电子学
Vacuum microelectronics, Field emission arrays, Silicon cone cathode
