摘要
SOI(silicononinsulator)高温压力传感器是一种新型的半导体高温压力传感器,具有耐高温、抗辐射、稳定性好等优点,能够解决石油、汽车、航空、航天等领域对高温压力传感器的迫切需求,在高温领域有很大的潜力.本文论述了SOI材料的制备方法-特别是硅片直接键合技术(SDB),简单介绍了SOI压力传感器的优势、制作工艺以及SOI压力传感器的发展现状.
High temperation SOI (silicon on insulator) pressure Sensor is a novel senmiconductor pressure sensor , it has the advantages of resisting high temperature, radiationand goodstability.can meet the needs in some harshenviroment, such as in the oil refining industry, automotive industry, aviation and space engineering , it has great potential in high temperature field. In this paper, we discuss the preparation methods of SOI materials-especially in silicon direct bonding method.and simply reports the predominance , the fabrication processes and development status of SOI pressure sensor.
出处
《河北工业大学学报》
CAS
2005年第2期14-19,共6页
Journal of Hebei University of Technology
