摘要
多晶硅薄膜是当前在能源科学和信息技术领域中广泛使用的功能材料,它兼具单晶硅和氢化非晶硅(a-Si:H)的优点.本文评论了近几年多晶硅薄膜制备技术的研究进展,着重讨论了每种方法薄膜的淀积机理,并预测了多晶硅薄膜制备技术的未来发展趋势.
In recently, poly_Si films, including the characteristic of c_Si and a_Si:H, are widely used in energy sources and informational science field. This paper reviews the development of the fabricated technique of the poly_Si films, and discusses the deposited mechanism of every method. Finally, we predicate the developed tendency of the fabricated technique of poly_Si films.
出处
《河北大学学报（自然科学版）》
CAS
北大核心
2005年第1期97-103,共7页
Journal of Hebei University(Natural Science Edition)
基金
河北省自然科学基金资助项目(503125)
