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PMOSFET的NBTI效应 被引量：1

NBTI Effects in PMOSFET
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摘要 随着工艺的发展,器件尺寸的不断缩小,PMOSFET受负温度不稳定性(NBTI)效应影响而失效的现象愈来愈严重,NBTI效应的影响成为器件可靠性的一个焦点问题。本文综述了NBTI效应的产生机理、影响因素、减缓方法及其相关的一些前沿问题。 With the advanced processes, the feature size of the devices keeps diminishing, whichleads to more frequent failure of PMOSFET due to NBTI effects that now becomes a focus of devicereliability. NBTI effect is reviewed on mechanisms, affecting factors, alleviating methods and therelevant problems.
作者 李若瑜 李斌 陈平 韩静
机构地区 华南理工大学微电子学系
出处 《半导体技术》 CAS CSCD 北大核心 2005年第5期62-66,27,共6页 Semiconductor Technology
关键词 PMOS场效应晶体管 负温度不稳定性 栅氧化层可靠性 器件失效 PMOSFET negative bias temperature instability reliability of the gate oxide device failure
分类号 TN386 [电子电信—物理电子学]
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参考文献32

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半导体技术
2005年 第5期

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