摘要
本文通过CZ法生长钼酸铅单晶,讨论了温度梯度、拉速、转速等生长参数对晶体质量的影响,分析了晶体开裂、包裹物等宏观缺陷以及位错等微观缺陷的形成机理,并从晶体形态、包裹体和位错密度变化方面探讨了晶体生长参数与晶体缺陷之间的内在关系,从而优化温度梯度等生长参数.温度梯度为20～25℃/cm,晶体转速为28r/min,拉速为1.6mm/h时,生长出的晶体形态完整,无开裂现象,晶体中无气泡包裹体,位错密度明显减小,晶体尺寸达φ40mm×70mm,无散射颗粒,在波长0.42～5.5μm范围内,平均透光率为72.6%.
The effects of growth parameters such as temperature gradient, pulling rate and rotation rate on quality of PbMoO4 single crystals grown by Czochralski method were studied in this paper. The formation mechanism of macro-defects such as crystal cracks and micro-defects such as dislocation has been investigated. The internal relations between defects and growth parameters were explored from the crystal shape, inclusions and change of dislocation density, and the growth parameters such as temperature gradient were improved. High-quality PbMoO4 single crystals were successfully grown at the temperature gradient of 20-25°C/cm, the rotation rate of 28 r/min and the pulling rate of 1.6 mm/h, whose shapes were perfect and the dimensions were as large as φ40 mm × 70 mm, and the average transmittivity was 72.6% in the range of 0.42-5.5 μm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第2期301-305,共5页
Journal of Synthetic Crystals
