摘要
介绍了使用碳纤维为固相碳源,无催化剂加入制备β-SiC纳米晶须的一种新方法. 制备了直径为10-40nm,长度为几个微米的纯度较高的β-SiC纳米晶须.讨论了这个制备方法的特点,并比较了几种不同制备方法的优缺点.同时分析了β-SiC纳米晶须的显微组织并探讨了其生长机理.研究表明,较高的生长温度、SiO和CO的局部过饱和蒸汽压是此方法能够大量制备β-SiC纳米晶须的关键因素.
A novel catalyst-free method of preparing β-SiC nanowhiskers by using carbon fibres as solid carbon source was presented. A large quantities of β-SiC nanowhiskers with 10-40 nm diameter and micrometer-scale length were successfully produced without catalyst. The features of this method were given. Compared with other preparing methods, the micro-structures of the β-SiC nanowhiskers and the growth mechanism were discussed. The research shows that the relatively high heating-temperature, the partial supersaturation of SiO, and partial supersaturation of CO are the key preparing factors.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期740-744,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(5013103050272039)
关键词
SiC纳米晶须
制备技术
纳米电子材料
Carbon fibers
Crystal whiskers
Grain growth
Microstructure
Scanning electron microscopy
Silicon carbide
Supersaturation
X ray diffraction analysis
