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氨化硅基Ga_2O_3/Al_2O_3制备GaN薄膜性质研究 被引量：2

Characteristics of GaN Film Prepared by Ammoniating Ga_2O_3/Al_2O_3 Deposited on Si(111) Substrate
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摘要 研究了Ga2O3/Al2O3膜反应自组装制备GaN薄膜。首先利用磁控溅射法在硅衬底上制备Ga2O3/Al2O3膜,再将Ga2O3/Al2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜。用傅里叶红外谱仪(FTIR),X射线衍射(XRD)和扫描电镜(SEM)对试样进行结构、组分和形貌分析。通过分析薄膜各方面的性质,得出了用此方法制备氮化镓薄膜的Al2O3缓冲层最佳的厚度为15nm左右,最佳氨化条件是在900℃下氨化15min。 Gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga2O3/Al2O3 films deposited by rf magnetron sputtering. The formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM). The sample with the thickness of the Al2O3 of about 15 nm, being ammoniated at 900 degrees C for 15 minutes, has the best crystal quality and surface morphology.
作者 魏芹芹 薛成山 孙振翠 庄惠照 王书运
机构地区 山东师范大学
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2005年第5期746-749,共4页 Rare Metal Materials and Engineering
基金 国家自然科学基金重大研究计划(90201025) 国家自然科学基金(60071006)资助项目
关键词 GAN Ga2O3/Al2O3膜 氨化 磁控溅射 GaN Ga2O3/Al2O3 film ammoniating magnetron sputtering
分类号 TN304 [电子电信—物理电子学]
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参考文献14

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二级参考文献4

共引文献98

同被引文献12

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稀有金属材料与工程
2005年 第5期

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