摘要
对双极型晶体管ΔVBE瞬态热阻测试法中晶体管壳温波动和测量延迟时间的误差进行了分析,提出了提高测试精度的误差修正方法.以3DK457(F0金属封装)双极晶体管为实验对象进行了研究,结果表明:晶体管瞬态热阻ΔVBE修正测试方法与红外扫描热像法和标准电学法相比较在保持较高测量精度的前提下,测试成本低,测量效率高.
A new method of accuracy correction is presented for improving the measurement accuracy of ΔV be of a bipolar transistor in testing its transient thermal resistance.The method is based on the analysis of errors induced by the case temperature fluctuation and the measurement time delay.A bipolar transistor of the type of 3DK457(with FO metal-pack) is taken as an example.It shows that,compared with the method of infrared scanning thermograph and standard electricity,the method proposed here for ΔV be correction of bipolar transistors features low measurement costs and high measurement efficiency while maintains high measurement accuracy.
基金
军用电子元器件科研项目(批准号:0310GK0002)~~
关键词
双极晶体管
瞬态热阻
试验方法
bipolar transistors
transient thermal resistance
test methods
