摘要
通过考虑迁移率和阈值电压随温度的变化关系,模拟分析了4H-SiCn-MOSFET高温下的电学特性,模拟结果与实验有较好的符合.并进一步讨论了主要结构参数和工艺参数对高温电特性的影响及其最佳取值.
High-temperature electrical properties of 4H-SiC n-MOSFET are simulated and analyzed by considering changes of mobility and threshold voltage with temperature. The simulated results are in good agreement with experimental data. Further more, influences of main structural and technological parameters on high-temperature electrical properties of devices are discussed for obtaining optimum values of these parameters.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第6期2918-2923,共6页
Acta Physica Sinica
基金
国家自然科学基金项目(批准号:60176030)资助的课题.~~
