摘要
通过傅里叶红外光谱、正电子湮没寿命谱和Hall技术研究了高剂量快中子辐照直拉硅的辐照缺陷、电阻率、载流子迁移率、载流子浓度随退火温度的变化 .经快中子辐照 ,直拉硅样品的导电类型由n型转变为p型 .在 4 5 0和6 0 0℃热处理出现两种受主中心 ,分别由V2 O2 ,V2 O ,VO2 ,V O V及V4 型缺陷引起 ,这些缺陷态的出现使得样品中空穴浓度迅速增加 ;大于 6 5 0℃热处理这些受主态缺陷迅速消失 ,样品的载流子迁移率及载流子类型开始恢复 ,并出现一种与辐照相关的施主态缺陷 ,导致样品的电子浓度增加 ,电阻率迅速下降 .这种施主态缺陷的浓度在 75 0℃热处理达到最大 ,并在随后大于 90 0℃ ,1h热处理很快被消除 .
Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第4期1783-1787,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :5 0 0 3 2 0 10
5 0 472 0 3 4)
河北省自然科学基金 (批准号 :60 10 17
E2 0 0 5 0 0 0 0 48)资助的课题~~
