摘要
采用异质结双台面双极型结构设计微波功率器件,选择Si作发射区和集电区,Si1-xGex合金作基区的n-p-n型HBT,利用数学方法,通过实验数据,采用MATLAB得到了一个比线性化更精确的禁带宽度Eg在300K时关于Ge组分变化的方程。并用数值方法计算出集电区电流密度Jc随VBE变化的直流方程,与实验结果相符。并得到一个最佳的Ge组分值。对器件的仿真设计具有实际指导意义。
A double-mesa hetero-junction bipolar structure of n-p-n type microwave power device is used. The Si is chosen for emitter and collector, and Si_ 1-xGe_x alloy is for base. Based on some experiment data, a numerical method is used to get an equation about forbidden band E_g via the variety composition of Ge at 300 K using MATLAB, which is more precision than linearization. We also calculate the collector current density J c via the variety of V_ BE and the obtained equation is consistent with the experiment result. An optimum Ge composition value was found. It has practical significance for the device design and simulation.
出处
《电子器件》
CAS
2005年第2期251-253,共3页
Chinese Journal of Electron Devices
