摘要
我们采用真空热蒸镀的方法,在60℃的SiO2衬底上生长了并五苯薄膜。通过X-射线衍射、原子力显微镜和Raman散射光谱等手段,分析了薄膜的结晶状态和微观形貌,证明了在衬底温度为60℃的条件下,可以用真空镀膜法生长出具有较高结晶度的并五苯薄膜。此外,我们讨论了并五苯薄膜的紫外-可见吸收光谱和光致发光光谱,分析了各个谱峰形成的原因。
Pentacene thin-films were fabricated by thermal evaporation on SiO2 substrate at 60°C. The crystallization and morphology of the samples were investigated by X-ray diffraction, atomic force microscopy, and Raman scattering spectrum, which has indicated that the film grown at this temperature has a high crystalline degree. The optical behaviors, such as UV-Visible absorption and photoluminescence (PL) of pentacene film were also analyzed.
出处
《电子器件》
EI
CAS
2005年第2期268-270,共3页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助项目(10274009)
国家杰出青年科学基金资助项目(60125513)
关键词
并五苯
吸收
光致发光
pentacene
absorption
photoluminescence
