摘要
在对传统典型CMOS带隙电压基准源电路分析和总结的基础上,综合一级温度补偿、电流反馈技术,提出了一种1-ppm/°C低压CMOS带隙电压基准源。采用差分放大器作为基准源的负反馈运放,简化了电路设计。放大器输出用作电路中PMOS电流源偏置,提高了电源抑制比(PSRR)。整个电路采用TSMC0.35μmCMOS工艺实现,采用HSPICE进行仿真,仿真结果证明了基准源具有低温度系数和高电源抑制比。
The design of 1-ppm/~°C CMOS bandgap voltage reference with low power supply in temperature compensation and current compensation technology is described in this paper. The differential amplifier is used for bandgap reference negative feedback amplifier,which simplifies circuit design. The biasing of the PMOS current source is derived from the output voltage of the amplifier,leading to a high power supply rejection(PSRR).The bandgap references were implemented in a standard 0.35 μm CMOS process.The entire circuit is simulated with HSPICE simulation tool, the result show low temperature coefficient and high PSRR in this circuit.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第2期246-249,264,共5页
Research & Progress of SSE
基金
国家高技术研究发展863计划资助项目(2002AA1Z1210)
