期刊文献+

在SOI基上设计实现D/A驱动的高压LDMOS开关电路 被引量:1

A High Voltage LDMOS Switch Circuit with a D/A Driver in SOI Material
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摘要 设计实现SOI基上带有D/A驱动的高压LDMOS功率开关电路,利用D/A变换的灵活性,运用数字电路与高压模拟电路混合设计方法,实现数字控制的耐压为300V的LDMOS功率开关电路.该功率集成电路芯片的实现,为SOI高压功率开关电路提供了一种更为方便快速的数字控制设计方法,同时也为功率系统集成电路提供了一种有效的实验验证,从而证实了功率系统集成的探索在理论上以及工程上具有一定的可行性. A high voltage LDMOS power switch circuit with a D/A driver in the SOI material is designed.By taking advantage of the convenience of D/A transform,a 300V LDMOS power switch circuit with digital control by digital circuit and the high voltage circuit design method is realized.The realization of a power integrate circuit provides not only a fast and convenient design method for the SOI high voltage power switch circuit,but also a valid experiment for a system power integrate circuit.It confirms the possibility of a system power integrate circuit in that theory and engineering.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第6期1255-1258,共4页 半导体学报(英文版)
基金 国家自然科学基金 总装预研和国防重点实验室(批准号:41308020210)资助项目~~
关键词 D/A驱动电路 绝缘体上硅 LDMOS 高压开关电路 D/A driver circuit SOI LDMOS high voltage switch circuit
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参考文献8

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二级参考文献22

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