摘要
采用热丝化学气相沉积法在Si(100)衬底上,于较低的衬底温度(400℃)下,制备出良好结晶。经对样品进行的X射线衍射(XRD),以及傅立叶变换红外光谱(FTIR)检测,证实该沉积薄膜为立方碳化硅。原子力显微镜(AFM)测试结果表明,所获样品晶粒大小为纳米尺度。
The nano-crystal β-SiC thin films were grown on Si(100) substrates by Thermal filament CVD at low substrate temperature(400 ℃).It optimized the deposition conditions in order to obtain well crystalline degree in our samples.The Fourier Transform Infrared Spectroscopy(FTIR) spectra and X-ray diffraction(XRD)of the samples testified the formation of β-SiC in the thin films,and estimated the crystalline size for these thin films was nanometer-scale by a typical surface morphology of AFM.
出处
《南昌大学学报（理科版）》
CAS
北大核心
2005年第2期173-175,共3页
Journal of Nanchang University(Natural Science)
