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低电阻p-DBR结构的模拟分析 被引量:2

Simulation Analysis on Low Resistance p-type DBR Structure
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摘要 设计了低电阻的渐变型分布布拉格反射器(DBR)结构,模拟分析了采用渐变p-DBR结构对价带能带的影响,并详细讨论了渐变形状、渐变区宽度、掺杂浓度等参数对低电阻渐变DBR结构的价带势垒的影响。利用MOCVD技术制备了实验样品,模拟结果与实验数据基本吻合。 The low series resistance graded DBRs structures are designed. The effects on valance band of p-type graded DBRs are simulated and compared. Moreover, the effects of grading profile, graded region width and doping concentration on valence band barrier height are studied. The simu- lated results closely accord with the experiment results.
出处 《半导体技术》 CAS CSCD 北大核心 2005年第6期56-59,共4页 Semiconductor Technology
基金 国家自然科学基金资助项目(60276033 69889601) 国家"863"高技术计划资助项目(2002AA312070) 国家"973"计划资助项目(G20000683-02) 北京市自然科学基金资助项目(4021001)
关键词 渐变布拉格反射器 渐变形状 价带势垒 graded DBR grading profile valence band barrier
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参考文献6

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共引文献13

同被引文献44

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