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共振隧穿器件及其集成技术发展趋势和最新进展 被引量：3

Development Trend and New Progress on Resonant Tunneling Devices and Its Integration
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摘要 介绍了共振隧穿器件及其特点,论述了该类器件及其集成技术的发展趋势和最新进展,特别是SiO 2S/iS/iO 2共振隧穿二极管及其集成电路的研制成功是一个突破性的进展。 Resonant tunneling devices and its features were introduced.The development trend and new progress on resonant tunneling devices and its integration were discussed.In the new progress,particularly,the fabrication of the SiO2/Si/SiO2 resonant tunneling diode and its integration circuit is a advance progress in this area.
作者 郭维廉 牛萍娟 苗长云
机构地区 天津工业大学信息与通讯工程学院
出处 《微纳电子技术》 CAS 2005年第7期298-304,共7页 Micronanoelectronic Technology
基金 天津市应用基础研究重点项目资助(043800811)
关键词 共振隧穿二极管 共振隧穿三极管 集成电路 resonant tunneling diode(RTD) resonant tunneling transistor(RTT) IC
分类号 TN31 [电子电信—物理电子学]
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参考文献11

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同被引文献21

  • 1郭维廉.共振隧穿器件概述——共振隧穿器件讲座(1)[J].微纳电子技术,2005,42(9):398-404. 被引量：6
  • 2王洪梅,刘丕均,张亚非.电子在半导体多势垒结构中隧穿现象的研究与进展[J].固体电子学研究与进展,2005,25(4):450-455. 被引量：1
  • 3Suzuki Safumi,Teranishi Atsushi,Hinata Kensuke,et al.Fundamental oscillation of up to 831 GHz in GaInAs/AIAs resonant tunneling diode[J].Applied Physics Express,2009,2(5):054501.
  • 4Masahiro Asada,Safumi Suzuki,Naomichi Kishimoto.Resonant tunneling diodes for sub-terahertz and terahertz oscillators[J].Japanese Journal of Applied Physics,2008,47(6):4375-4384.
  • 5Hyungtae Kim,Seongjin Yeon,Sangsub Song,et al.High-speed digital circuits using inp-based resonant tunneling diode and high electron mobility transistor heterostructure[J].Japanese Journal of Applied Physics,2006,45(4B):3384-3386.
  • 6Supriyo Darts.Non-equilibrium green's function (negf) formalism:an elementary introduction[C].Proceedings of the International Electron Devices Meeting (IEDM),2002:703-706.
  • 7Soban Z,Voves J,Cukr M,et al.Hole transport in the p-type RTD[C].The Seventh International Conference on Advanced Semiconductor Devices and Microsystems,Smolenice Castle,Slovakia,2008:251-254.
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微纳电子技术
2005年 第7期

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