摘要
在双层、异型硅外延中，通常采用预通掺杂剂二步外延法。本文对掺杂剂预通过程中产生的气一固扩散进行理论及实验研究，分析了预通条件（温度、时间、预通量等）对气一团扩散的影响，提出了减小Ｐ－Ｎ过渡区改进的二步外延法。
The two-step way of pre-entering dopant was usually used for double-layer, heier-type Si epitaxial structure. In this paper, the gas-solid diffusion produced during the pre-entering dopant has been studied theoretically and experimentally. The effect of pre-entering conditions on the gas-solid diffusion has been analyzed. The Improved two-step way of dicreased P-N transition region is given.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第1期74-79,共6页
Research & Progress of SSE
关键词
双层
异型
二步法
硅
外延生长
Si Epitaxy, Double-Layer, neter-Type, Auto-Diluting, Transition Region, Two-Step Way
