摘要
用Ｎ２气和ＮＦ３反应气体，在较低的刻蚀功率下实现了用薄正性光刻胶ＡＺ１５１８作掩模，均匀、快速刻蚀ＳｉＯ２，ＳｉＯＮ，Ｓｉ３Ｎ４，ＷＮ，Ｗ等材料的等离子刻蚀技术。利用到蚀过程中射频参数的变化和计算机技术，将射频参数的变化在计算机屏幕上实时显示，实现了计算机辅助监控和终点检测技术。
he research of plasma etching with NF3/N2 shows that high etching rates and good etching uniformities for materials such as SiO2,SiON,Si3N4,WN and W at low RF power,with thin masked AZ1518 photoresist can be obtained. The varieties of RF parameters during the etching processing have been applied to monitor and control the plasma etching with computer technology.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第2期182-185,共4页
Research & Progress of SSE
关键词
等离子刻蚀
砷化镓
CAD
监控
Plasma Etching,Endpoint Detection,Monitored and Controlled by the Computer System
