摘要
结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含氧化限制层的1·3μm量子点VCSEL结构.
A theoretical study on 1.3 μm GaAs-based quantum dot vertical-cavity surface-emitting lasers (VCSELs) was made. Investigation of the influence of VCSELs on the optical confinement factors and the optical loss and the calculation of the material gain of the assembled InGaAs/GaAs quantum dots. Analysis of the threshold characteristic was made and the multi-wavelength cavity and multilayer quantum-dot stack structure is found to be more suitable for quantum dot VCSELs.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第8期3651-3656,共6页
Acta Physica Sinica
基金
国家重点基础研究发展规划(批准号:TG2000036603)
国家自然科学基金(批准号:60137020)
国家高技术研究发展计划(批准号:2002AA312080)资助的课题.~~
