摘要
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明:随衬底温度的升高,材料中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含量随衬底温度的升高而增加(在1019cm-3量级);与高衬底温度相比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T-s). Analysis of materials structure was conducted using Fourier transform infrared (MR). The results showed that hydrogen content of the samples decreased with the increase of T-s. The results of MR and secondary ion mass spectra indicated that the oxygen content of the samples increased with the increase of T-s. Compared with those at higher T-s, samples prepared at low T-s easily adsorbed oxygen, and showed bad stability.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第8期3910-3914,共5页
Acta Physica Sinica
基金
国家重点基础研究发展规划(批准号:G2000028202
G2000028203)
教育部国际科技合作项目(批准号:2002DFG00051)
国家高技术研究发展计划(批准号:2002AA303261)资助的课题.~~
