摘要
从基本的玻尔兹曼输运方程出发，推导了非均匀能带结构简并半导体中电子和空穴电流方程的一般形式，着重处理了方程中的载流子温度梯度项，给出了一种新的便于半导体器件数值分析的包含影响材料能带结构各主要因素的电流广义漂移扩散模型及相关系列公式，应用该模型对Ｓｉ／ＳｉＧｅ异质结双极晶体管的热电子效应进行了数值模拟和讨论。
Complete electron and hole currents in degenerate semiconductor with nonuniform bandstructure are obtained from the basic Boltzmann transport equation in this paper,a new gen-eralized drift and diffusion model,covering a set of main factors that cause changes of bandstructure,is given firstly by dealing with the carrier temperature gradient terms arising incurrent equations,This model,as well as other series-relative equations,is very convenientfor numerical analysis of semiconductor devices. Based on those above,the hot electron ef-fects in Si /SiGe HBT are simulated and discussed.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1995年第6期51-59,共9页
Journal of Xi'an Jiaotong University
基金
国家教委博士点基金
关键词
简并半导体
热载流子
半导体
电流方程
Boltzmann transport equation degenerate semiconductor hot carriers numerical analysis
