摘要
ＧａＮ是重要的蓝光半导体材料．我们以ＴＭＧａ和ＮＨ３为源在（０１１２）α－Ａｌ２Ｏ３衬底上成功的用ＭＯＣＶＤ方法生长了ＧａＮ外延层，研究了ＧａＮ的表面形貌与结晶学、电学和光学特性．ＧａＮ（２１１０）面的双晶回摆曲线衍射峰的最小半高宽已达１６＇．并观测到ＧａＮ所发出的紫外和可见光波段的阴极荧光．
Abstract GaN is an important semiconductor material operating in the blue light range.GaN epitaxial layer was successfully achieved by MOCVD with TMGa and NH3 as sources on (0112) α-Al2O3 substrat. The morphorlogical, crystalline, electrical and optical characterizations of the GaN film are investigated. The minimun FWHM of (2110) peak of double crystal X-ray diffracton rocking curve is 16'. Near ultraviolet and visible light are observed by cathodeluminescence.
关键词
氮化镓
MOCVD生长
半导体材料
Chemical vapor deposition
Crystal growth
Metallorganic chemical vapor deposition
Nitrogen compounds
