摘要
本文根据大截面单模脊形波导条件和有效折射率法，在硅片直接键合后背面抛光减薄的ＳＯＩ材料上，通过氢氧化钾各向异性腐蚀的方法，成功地研制出ＳＯＩ定向耦合器，在波长为１．３μｍ时，其平均插入损耗为４．８ｄＢ，平均串音小于－１８．６ｄＤ．
Abstract SOI directional couplers have been studied by using the large crosscasection single mode rib waveguides conditions and using the effective index methods in silicon direct bonning SOI by back-polishing, and fabricated by using KOH anistropic etching. The average insertion loss are measured to be 4. 8 dB at a wavelength of 1. 3μm, the average crosstalke is below- 18. 6dB at 1. 3μm.
基金
国家"863"基金
国家教委博士点基金
关键词
定向耦合器
SOI
耦合器
Electric insulators
Fabrication
Waveguide couplers
