摘要
研究了修Ｖ２Ｏ５对ＳｎＯ２元件电阻和稳定性的影响．掺杂后，稳定性提高但灵敏度下降；掺杂量＜０．５６ｗ．％肘，电阻降低；掺杂量＞０．５６ｗｔ％肘，电阻上升．利用量子化学分析机理．结果表明：由于Ｖ５＋的掺入，提高了ＳｎＯ２晶胞前线轨道及材料的稳定性；在掺杂量少时，由于氧原子的空穴态和锡原子的电子态增加，使材料的电阻下降，在掺杂量多时，因电子输运轨道受阻导致电阻增大．
Effect of doping V2O5 on resistance and stability of SnO2 element is studied. The experiment results show that the resistance drops when the V2O5 content is fewer than 0.56w.%, and the resistance rises when the V2O5 content is more than 0.56w.% and the stability is improved and sensitivity drops with V2O5 doping. These electric behaviours are studied by CNDO / 2 method. By doping V, the stability of FMO of SnO2 is improved, consequently, the materical stability is also improved. In low doping content, the resistance drops for the increasing of both Sn electron and O hole state, in high doping content, the resistance tises for the holding up of electron tranfer path.
出处
《材料研究学报》
EI
CAS
CSCD
1995年第5期438-441,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金
关键词
掺杂
电学行为
前线轨道
二氧化锡
SnO_2 doping electric behaviour Front Molecular Orbital
