摘要
近年来对基于ＭＯＳ技术制造的离子散场效应晶体管（ＩＳＦＥＴ）的特性研究做了大量的工作。综述了ＩＳＦＥＴ器件（尤其是ｐＨ－ＩＳＦＥＴ）在敏感机理、集成化、封装和应用等方面的研究状况与新进展。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology. The start-of-art and new development of ISFET(particularly in pH-ISFET sensors) in mechanism, integratigation,encapsulation and application ect, are described.
出处
《传感器技术》
CSCD
1995年第4期1-6,共6页
Journal of Transducer Technology
关键词
ISFET器件
敏感机理
离子敏
场效应晶体管
ISFET sensors Mechanism CAD technology Integratigation Encapsulation Application
