摘要
在绝缘衬底上生长单晶硅薄膜,即SOI技术,是近年发展起来研制三维集成电路的一项新技术。本文讨论了利用扫描电子束对淀积在SiO_2上的多晶硅薄膜进行改性的实验。采用籽晶液相外延形成单晶硅薄膜。本实验的重点在于摸索电子束的功率密度、扫描速度、衬底的温度和样品结构等因素对形成单晶硅薄膜质量的影响。实验取得了较好的结果,获得了200×25μm^2的单晶区。
An experiment for preparation of SOI films by using scanning electron beam to modify polycrystalline silicon on SiO2 is presented. This method takes on the lateral epitaxial growth of liquid phase crystallon to form monocrystal Si films. The effects of beam power density, scanning velocity, temperature of substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the mono-crystalline silicon zone is nearly 200 × 25μm2.
基金
国家自然科学基金
关键词
单晶硅薄膜
材料改性
实验
绝缘
衬底
生长
Monocrystalline silicon film, SOI technology, Material modification
