摘要
本文较系统和全面地总结了ＧａＡ＿ｓ和Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ材料的物理参数模型，包括介电常数、能带参数、载流子迁移率以及复合机制和寿命等，给出了易于应用的数学公式，其中Ａｌ＿ｘＧａ＿（１－ｘ）Ａ＿ｓ重掺杂能带窄变公式为本文首次推导。这些物理参数模型对于Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ／ＧａＡｓ异质结器件的研究有着十分重要的意义。
The physical-paramcter models of Al_xGa_(1-x)As materials,including static and high-frequency dielectric constants,bandstructure porameters,carrier mobilities and recombinationmechanisms and lifetimes,have been discussed in detail and systematically in this paper,in whichthe formula on the bandgap narrowing in heavily doped Al_xGa_(1-x)As was deduced for the first time.These models are very significant for the research on the Al_xGa_(1-x)As/GaAs heterostructure devices.
出处
《电子器件》
CAS
1995年第1期36-45,共10页
Chinese Journal of Electron Devices
