摘要
对施主掺杂而言，在缺位补偿区，引入高受主掺杂可使材料的常温电阻率随受主杂质的引入量增加呈Ｕ型曲线变化，同时晶粒尺寸随之单调上升。这是由于受主杂质的引入利于产生氧空位，导致钡空位浓度下降的结果。
An experimental fact of donor-doped BaTiO3 is developed that the resistance of the materials changes as a U-type curve with the increasing of the contents of the acceptors,and at the same time,the grain sizes increase monotonously.The reason is that oxygen vacancies are formed due to the introduction of acceptor impurities which give rise the decrease of the concentration of Ba vacancies.
出处
《电子元件与材料》
CAS
CSCD
1995年第3期25-28,共4页
Electronic Components And Materials
