摘要
提出一种简便可行的ＧｅｘＳｉ１－ｘ异质结无间距定向耦合光开关（ＢＯＡ型－ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｃａｌＡｃｔｉｖｅ）模型分析方法。该方法采用等离子体包散效应分析了这种光开关的电学调制机理；采用异质结超注原理分析了开关的电学性质；并根据典单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ０．０５ＳＩ０．９５／Ｓｉ异质结ＢＯＡ型光开关的结构参数和电学参数。
A simple and practical modeling of the GexSi1-x/Si heterojunction zero-gapdirectional coupler switch (BOA type-Bifurcation Optique Active) is proposed. Theelectro-optic modulsting mechanism of the zero-gap directional coupler switch is discussed by the plasma dispersion effect. The electricity character of the switch is analysed by theheterojunction ultra high injection principle. On the basis of the analysis and the theory ofthe classical single-mode optical waveguide, structure parsmeters and electrivcityparametersof the Ge0.05Si0.95/ Si heterojunction BOA switch with double-mode interference mechanism are designed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第2期243-247,共5页
Acta Optica Sinica
