摘要
根据受抑全反射的光学隧道效应和Ｇｏｏｓ－ｈａｎｃｈｅｎ位移分析ＳＯＩ全内反射型光波导开关中导模的传输和反射特性。在讨论等离子体戏散效应，ｐ－ｎ结大注入效应的基础上，分析了全内反射光波导开关的电学性质。设计了该器件的结构参数和电学参数。
The reflection phenomenon of the guided mode in SOI (Silicon On Insulator) total internal reflection optical waveguide switch is investigated based on optical tunneling effect due to frustrated total reflection and Goos-Hanchen displacement. The p-n junction large injection effect and plasma dispersion effect are discussed, and the electric characteristic of the SOI total internal reflection switch is studied. So, the structural and electric parameters of the switch can be designed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第12期1702-1706,共5页
Acta Optica Sinica
基金
国家教委博士点基金
