摘要
本文用考虑了增益饱和和热效应的耦合速率方程，对减反射涂层结构１．３μｍＩｎＧａＡｓＰ／ＩｎＰ超辐射发光二极管的输出特性进行了计算，给出了腔长、有源层厚度和后腔面反射率对其输出光功率的影响以及光谱半宽随腔长和注入电流的变化。计算结果与我们制备的该结构超辐射发光二极管测试结果有较好的符合。
In case of considerating gain saturation and heating,we calculate the output characteristicsof1.3μmInGaAsP/InP antireflection coating structure superlumihescent diode with coupling rateequations. We give the effects of cavity length,active layer thickness,reflectivity of rear facet on itsoutput power,and the full width at half maximum of the spetral band-width to varity with cavitylength and injection current.Results calculated are compared with results measured that we fabricatethis structure superluminescent diode,they are accordant.
出处
《光子学报》
EI
CAS
CSCD
1995年第1期36-42,共7页
Acta Photonica Sinica
