摘要
运用局域密度近似的Ｈａｒｔｒｅｅ－Ｆｏｃｋ－Ｓｌａｔｅｒ理论和嵌入分子集团的方法分别对氟化钡（ＢａＦ２）和掺镧氟化钡（ＢａＦ２：Ｌａ３＋）的能级结构进行了计算，发现掺Ｌａ对抑制ＢａＦ２晶体闪烁光慢成分的直接原因可能并非Ｌａ本身，而是由它所引入的填隙氟离子（Ｆ１）。
The electronic structure of pure BaF2 crystal and La doped BaF2 crystal have been calculated using a self-consistent molecular-cluster model. The cluster is embedded in the crystal lattice and the entire system is treated iteratively in the Hartree-Fock-Slater local-density theory. As La doped BaF2 is concerned, the obtained results reveal that the Fi introduced by La may contribute to the suppression of the slow component in the scintillation light of BaF2 crystal.
出处
《核技术》
CAS
CSCD
北大核心
1995年第7期391-394,共4页
Nuclear Techniques
基金
国家自然科学基金
关键词
氟化钡
闪烁光
慢成分
抑制
镧
闪烁晶体
晶体
La doped BaF2 crystal,Slow component suppression,Embedded molecular-cluster model,Hartree-Fock-Slater local-density discrete variational method
