摘要
采用无ＧａＡｓ缓冲层，低温＋常规的方法在Ｇ８Ａｓ（１００）衬底上进行了ＩｎＳｂ薄膜的分子束外延（ＭＢＥ）生长，测试了样品的双晶Ｘ射线衍射半峰宽（ＦＷＨＭ），电学霍尔（Ｈａｌｌ）特性及红外透射谱。通过大量的实验发现。不生长０．５μｍＧａＡｓ缓冲层，同样可生长出电学性能及红外透过率都较理想的样品，这可缩短材料的生长周期，降低生产成本，对将来器件的批量制作有一定的意义。
The molecular beam epitaxial of groMh of InSb layers on GaAs(100)B substrate, without thin GaAs buffer laver has been described.First, the low temperature layer was deposite4then the active layer was grown,Double- crystal X-ray diffracto metry, Hall effect measurements and IR tra nsmissio n measurements of these samples were performed. During these experiments,itwas found that without the 0.5μm GaAs buffer layer the films with results comparable to those having the GaAs buffer layer can be also obtained. By this way,we can shorten the growth period,lower the cost and facilitate the device process in the fu-ture
关键词
红外焦平面
缓冲层
迁移率
分子束外延
锑化铟
Infrared focal plane Buffer layer Mobility Electrical Hall property
