摘要
提出了一种新型功率集成电路结构的设计方法。通过恰当的版图设计和利用垂直双扩散技术，可以在同一芯片上实现具有效强功率驱动能力的功能电路。这种结构的加工过程同ＶＤＭＯＳ完全兼容，关键技术是采用对接双重扩散形成ＮＭＯＳ结构，为实现芯片中ＮＭＯＳ结构与功率器件结构击穿性能的一致性，图形设计时，应将ＮＭＯＳ单元放置在ＶＤＭＯＳ器件的中心附近以取代部分ＶＤＭＯＳ元胞。通过电路与功率器件的内部连接而形成功率集成电路。
A novel structure for power integrated circuits is presented.The functional circuits withfairly good driving ability can be obtained on a chip by approporiate layout design and verticaldouble diffusion technique. The processing of this structure is fully compatible with that ofVDMOS.The key technique is the “ butt joint double diffusion ” for the formation of theNMOS structure.To keep the breakdown performance of the NMOS structure in line withthat of the VDMOS device structure,device structure the NMOS units,during layout de-sign,should be placed somewhere near the center of the VDMOS device to replace part ofthe VDMOS cells.The power functional circuit can be formed by connecting the NMOS cir-cuit with the VDMOS device.
出处
《华中理工大学学报》
CSCD
北大核心
1995年第9期15-19,共5页
Journal of Huazhong University of Science and Technology
