摘要
通过对失效霍尔器件的分析,揭示了芯片金属电极脱边形成位移金属丝的工艺缺陷,导致桥接相邻内电极引起漏电或短路的失效机理。
Based on the failure analysis of a Hall device，it was shown that the process defect of displacement due to the metal electrode frilling resulted in the failure mechanism of leakage or short caused by the bridging between adgacent inner electrodes。
出处
《电子产品可靠性与环境试验》
2005年第4期36-38,共3页
Electronic Product Reliability and Environmental Testing
关键词
霍尔器件
工艺缺陷
功能失效
Hall device
process defect
functional failure
