摘要
本文用化学反应动力学中的质量作用定律及阿累乌尼斯（Ａｒｒｂｅｎｉｕｓ）定律，对金属氧化物半导体一些统计公式进行了研究，给出了费米（Ｆｅｒｍｉ）函数、氧空位施主浓度的公式，表面吸附氧的氧原子及氧离子浓度公式．并对有关问题进行了讨论．
Some researches about statistic formulas of metal oxide semiconductors were made with mass reaction law and Arrhenius law in chemical reaction kinetics. Fermi f unction,formula of donor density of oxygen vacancy and formulas of density of attracted oxygen atoms and ions on the surface were given,some concerned problems were also discussed.
