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Al─Si合金中共晶硅生长形态的研究 被引量:2

THE STUDY ON THE GROWN MORPHOLOGIES OF EUTECTOID SILICON IN Al-Si ALLOYS
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摘要 用氮气雾化法制取了Al─12.54%Si合金微粒,再加热至700℃进行重熔处理;又对加锶变质的Al─13.23%Si合金熔体进行了直流电处理.用扫描和透射电镜研究了不同处理条件对Al─Si合金中共晶硅生长形态的影响,且从理论上分析了快冷所引起的共晶细化和锶与直流电处理的变质作用.试验结果表明,氮气雾化法与重熔处理的试样中,共晶硅呈球状和条状,加锶变质的共晶硅为弯扭的纤维状,直流电熔体处理后共晶硅呈圆球状,其颗粒尺寸在20~25nm范围内. In this paper, the particle of Al-Si alloy with 12. 54 percent of silicon were produced with the method of atomization. These particles were heated to 700℃ and re-melted. The modified flux with Sr of Al-Si alloy with 13. 23 percent of silicon was treated by direct current. The effect of different processing condition on the morphologies of eutectoid silicon in Al-Si alloy was investigated with TEM and SEM. The eutectoid fining caused fy quick cooling and the modified action of Sr and direct current treatment were theoretical analyzed. The results show that in samples which were produced using atomized particles or re-melting treatment, the morphologies of eutectoid silicon are spheroidal or ribbon and in samples which were modified with Sr, the morphologies of eutectoid silicon are curved fiber shape. After direct current treatment, the morphologies of eutectoid sition are spheroidal, their particle size is within 20~30nm.
出处 《山东工业大学学报》 1995年第4期306-311,共6页
关键词 共晶硅 生长形态 铝合金 氮气雾化法 铝硅合金 Aluminium-base oalloys Silicon Crystal microstructure Direct current,Disposal
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参考文献2

  • 1张启运,刘淑祺,胡佳.Al-Si共晶合金变质机理的探讨(Ⅱ)——Si相的不平衡度与形貌的关系[J]金属学报,1984(02).
  • 2朱培钺,陈熙琛,贾均,张宝书,刘贤功.铝硅合金变质过程的研究[J]哈尔滨工业大学学报,1981(01).

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