摘要
对目前广泛用于制备高Ｔｃ（转变温度）超导薄膜的环形磁控溅射成膜提出了一种新的理论模型，采用泰勒展开计算出了三阶近似的解析结果．通过计算机作出了薄膜生长速率及厚度均匀性随薄膜位置变化关系的三维曲线，得到了生长大面积均匀薄膜、快速生长薄膜的最佳位置，并同使用较广泛的平面磁控溅射的一些计算结果进行了比较．
This paper presents a new type calculation theory of the film deposited by cathode hollow magnetron sputtering method which has been used to prepare HSTC films recently.The third degree approximate calculatoin result was obtained by Taylor series method.SURF curves of film growth rate and thickness uniformity vs. its position were drawn by a computer. The optimum positions of prepareing large area uniform films and high speed growthing films are then clear. At last we compared the conclusions to planar magnetron sputtering calculation.
出处
《武汉大学学报（自然科学版）》
CSCD
1995年第3期351-356,共6页
Journal of Wuhan University(Natural Science Edition)
基金
国家自然科学基金
关键词
环形磁控制射
生长速率
厚度
薄膜
超导体
cathode hollow magnetron sputtering,growth rate,film thickness uniformity
