摘要
研究了激光对硅光电池的损伤，实验表明，损伤前后的饱和开路电压相等，损伤程度取决于损伤面积，损伤后伏安曲线变得平直，说明文献［１］提出的锑化钢光伏型探测器激光损伤的并联电阻模型有普遍意义。实验还发现激光损伤将导致反向击穿电压降低。
The laser damage of silicon cell has been investigated experimentally. The experiments show that the saturated photovoltages are the same for the damaged and undameged devices, and that the degree of damage is determined by the damaged area. The voltage-current curve becomes less bent. All these phenomena are showing that the laser damage model of Ref.[1] is valid. Laser damage will reduce the reverse breakdown voltage of the photoelectric device.
出处
《应用激光》
CSCD
北大核心
1995年第6期255-256,共2页
Applied Laser
基金
国家高技术计划激光技术领域资助
关键词
激光损伤
硅光电池
伏安特性
光电探测器
laser damage, silicon solar cell, voltage-current characteristic
