摘要
采用ＡｒＦ准分子脉冲激光沉积方法（ＰＬＤ），以六方氮化硼（ｈ－ＢＮ）作靶在Ｓｉ（１００）衬底上制备氮化硼薄膜。ＸＲＤ及ＦＴＩＲ透射谱测量表明生成的氮化硼薄膜是含有少量六方氮化硼结构的立方氮化硼（Ｃ－ＢＮ）．ＡＥＳ测量表明不同条件下生成的薄膜中Ｎ与Ｂ的相对含量是不同的，最大比例近乎为１：１，薄膜的维氏显微硬度ＨＶ最大值为１５８０ｋｇ／ｍｍ２。
Boron nitride thin films have been prepaied on the (100) surface of silicon substrate by the pulsed ArF excimer laser deposition (PLD) method. The structure and composition of the films have been measured by XRD, FTIR and AES, respectively. The results show that the films are cubic boron nitride (c BN) including small amount of hexagonal boron nitride (h BN). The highest value of Vickers microhardness of the films is about 1580 kg/mm2.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1995年第8期637-640,共4页
Chinese Journal of Lasers
