摘要
采用不同的方法裁剪高定向热解石墨(HOPG),制备纳米尺寸的石墨条.首先,发现用聚焦离子束(镓离子)刻蚀高定向热解石墨,可以得到边缘整齐程度在几十纳米的石墨条,另外,用电子束曝光和反应离子刻蚀的工艺,可以得到最小尺寸为50nm的纳米石墨图型(nanosizedgraphitepattern,纳米尺寸的多层石墨结构).采用了三种不同的方案制备反应等离子刻蚀过程中需要的掩膜,分别是PECVD生长的SiO2掩膜,磁控溅射的方法生长的SiO2掩膜和PMMA光刻胶掩膜,并将三种方案的刻蚀结果做了对比.
Nano-sized graphite patterns were obtained by tailoring graphite sheets using different methods. With focused ion beam etching we are able to produce grooves of minimum width - 30 nm. However, at the edges of the grooves there deposit with Ga-C compound which prevents the easy cleavage of the graphite sheets. With electron beam lithography and reactive ion etching techniques we are able to produce graphite patterns of sizes down to 50 nm. Three different types of masks are tested, and the results are compared and discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第9期4251-4255,共5页
Acta Physica Sinica
