摘要
以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUCpoly-SiTFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路.该行扫描电路工作电压为3.5-10V;当工作电压为5V、负载电容为22pf时,下降沿约为150ns,上升沿约为205ns,最高工作频率在1MHz以上;列驱动电路工作电压为3.5-8V;当工作电压为5V、负载电容为22pf时,上升沿约为200ns,信号衰减率为15%(64μs扫描周期),最高工作频率达到4MHz.将该MIUCpoly-SiTFT多晶硅行扫描、列驱动电路和有源选址电路集成到同一基板上,制备出象素数为80×RGB×60、动态显示效果良好的全集成型LCD屏样品.
Based on metal induced unilateral crystallization （MIUC） technology,poly-Si thin film transistor （poly-Si TFT） display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed,which can be made with the fabrication processes compactable with poly-Si TFT active matrix.The scan driver can work within the driving voltage from 3.5V through 10V. When it works at the driving voltage of 5V and the loading capacity of 22pf, the fall time and the rise time of the scanning circuit is about 150ns and 205ns respectively, the maximum working frequency is higher than 1MHz. Meanwhile, the data driving circuit can work within the voltage from 3.5V through 8V. Its rise time is about 200ns,its signal degradation ratio is about 15% during a period of 64μs,and the corresponding maximum working frequency is about 4MHz,when the data driving circuit work at the biased voltage of 5V and the loading capacity of 22pf. Using those MIUC poly-Si TFT display drivers, a self scanned active matrix LCD with pixel number of 80 × RGB × 60 was demonstrated.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2005年第8期1349-1352,共4页
Acta Electronica Sinica
基金
国家自然科学基金(No:60437030)
国家"863"平板显示专项(No:2004AA303570)
国家出国留学人员回国基金和香港RGC的资助
