摘要
通过对新型超净高纯试剂同常规CMOS酸碱试剂同时进行CMOS工艺中栅氧化前的清洗实验,从清洗后硅片残留金属量的电感耦合高频等离子体原子发射光谱分析、硅片表面形貌的AFM分析和MOS电容测量三个方面进行了应用实验。结果表明,以超净高纯乙腈为主要组分的新型试剂,其清洗效果总体优于常规CMOS酸碱试剂,可以考虑在半导体器件相应清洗工艺中采用。
The new super-clean and high-purity reagent and the common CMOS reagent of acid or alkali were used simultaneously by cleaning experiment before grid oxidation in CMOS technology, the metal content of a piece of cleaned silica was measured by ACP-AES, the appearance pattern of a piece of cleaned silica was measured by AFM, MOS electric capacity was measured too. The experimental results showed that cleaning effect of the new reagent made of super-clean and high-purity acetonitrile was superior to usual CMOS acid and alkali cleansing solution, it was used as cleaning solution for semiconductor.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第9期20-23,共4页
Semiconductor Technology
基金
中国石油化工股份有限公司科研开发资金资助(201074)
关键词
高纯试剂
半导体
清洗工艺
high-purity reagent
semiconductor
cleaning solution
