摘要
研究了纯SnO_2及掺入5%at的Cu^(+2),Y^(+3),Si^(+4)的SnO_2纳米微粉晶粒尺寸随温度的变化情况:600℃以前晶粒生长缓慢;600℃以后晶粒长大迅速.掺入Y^(+3),Si^(+4)可有效地抑制晶粒的长大,900℃退火2h晶粒尺寸仍小于30nm.晶粒尺寸下降可使电导温度峰往低温移动,当晶粒尺寸小于5nm时,电导峰出现在170℃附近,而掺杂可使电导温度峰展宽成平台.掺Si的纳米SnO_2,材料在200℃时对乙醇有较高的灵敏度和动态响应.
The thermal stability of nano-SnO2 doped with 5% at Cu, Y and Si has beenstudied. The grain growth was found in two-step way: below the temperature of 600C, growth is slow and then is fast above that of 600℃.Doping with Y and Si can con-strain the grain growth even if in the temperature range higher than 600℃.After an-nealing at 900℃ for 2h the grain size is still smaller than 30 nm for Si doped specimen.Resistance-temperature peak can be moved to lower temperature with decreasing ofgrain size. Resistance-temperature peak appears at about 170℃ when grain size is small-er than 5 nm, whereas doping can strainghten the peak to a plateau. Si doped nano-SnO2 has higher sensitivity and dynamic response for alcohol at 200℃.
出处
《传感技术学报》
CAS
CSCD
1996年第1期50-54,共5页
Chinese Journal of Sensors and Actuators
基金
广州市科委资助项目
关键词
氧化锡
纳米材料
晶化
掺杂
电导
温度特性
tin oxide nanostructured materials crystallization doping sensitivity
