摘要
针对石油化工等领域中高温下较高压力测量的要求，设计了压阻式压力传感器敏感芯片，采用SIMOX技术的SOI晶片，在微加工平台上通过低压化学气相淀积法（LPCVD）均相外延硅测量层、浓硼离子注入、热氧化、光刻、电感耦合等离子体（ICP）深刻蚀、多层合金化等工艺流程制作了该芯片，将其封装后，研制出了高精度稳定性佳的耐高温压阻式压力传感器．封装工艺进一步改善后，该芯片工作温区有望拓宽到300～350℃．
To meet special applications,such as high temperature, high efficiency or high dynamic range sensors, piezoresistive detection with silicon on insulator （SOI） strain gauges seems to be a better solution than one with conventional bulk-silicon. The successful batch fabrication of a piezoresistive pressure sensor chip, based on separation by implantation of an oxygen （SIMOX） SOl wafer,is described. The micro machining process mainly includes SIMOX, homoepitax-y silicon, a heavy dose of boron ion implantation doping, thermal oxidation, a passivation layer of silicon nitride and standard optical lithography, inductively coupled plasma （ICP）,multi-layer metallization and Au sputtering,etc. A sensor packaged with this kind of sensing chip has high accuracy and a good long-term stability in high temperatures up to 220℃. The results also show the potential to operate the device at temperatures up to 350℃ exists after issues relating to the packaging are resolved.
基金
国家高技术研究发展计划(批准号:2002AA404470)
国家"九五"传感器技术攻关(批准号:96-748-02-01/07)资助项目~~
