期刊文献+

Effect of Mesa Size on Thermal Characteristics of Ver tical-cavity Surface-emitting Lasers

Effect of Mesa Size on Thermal Characteristics of Ver tical-cavity Surface-emitting Lasers
下载PDF
导出
摘要 The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate. The effect of mesa size on the thermal characteristics of etched mesa vertical-cavity surfaceemitting lasers(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa VCSEL. Under a certain driving voltage, with decreasing mesa size, the location of the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characteristics of the etched mesa VCSELs will deteriorate.
出处 《Semiconductor Photonics and Technology》 CAS 2005年第3期170-173,共4页 半导体光子学与技术(英文版)
基金 National High Technology Research and Development Programof China(2001AA312180)
  • 相关文献

参考文献11

  • 1Iga K. Surface-emitting laser-its birth and generation of new optoelectronics field[J]. IEEE J. Select. Topics Quantum Electron., 2000, 6(6): 1 201-1 215.
  • 2Rapp S, Salomonsson F, Streubel K, et al. All-epitaxial single-fused 1.55 μm vertical cavity lasers based on an InP Bragg reflector[J]. Jpn. J. Appl. Phys. , 1999, 38(2B): 1 261-1 264.
  • 3Miller M, Grabherr M, King R, et al. Improved output performance of high-power VCSELs[J]. IEEE J. Select. Topics Quantum Electron., 2001, 7(2): 210-216.
  • 4Ronald Hadley G, Lear K L, Warren M E, et al. Comprehensive numerical modeling of vertical-cavity surface-emitting lasers[J]. IEEE J. Quantum Electron., 1996, 32(4): 607-616.
  • 5Man W M,Yu S-F. Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers[J]. IEEE J.Select. Topics Quantum Electron. , 1998, 4(4): 715-722.
  • 6Chuang S L. Physics of Optoelectronic Devices[M]. New York: John Wiley & Sons, Inc. ,1995. 362-363.
  • 7Taylor T W, Evaldsson P A. Temperature dependent operation of the vertical cavity surface emitting laser[J]. IEEE J.Quantum Electron. , 1994, 30 (10): 2 262-2 270.
  • 8Zhao Y-G,McInerney J G. Transient temperature response of vertical-cavity surface-emitting semiconductor lasers[J].IEEE J. Quantum Electron. , 1995, 31(9): 1 668-1 673.
  • 9Kobayashi T,Furukawa Y. Temperature distribution in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current[J]. Jpn. J. Appl. Phys. , 1975, 14(12): 1 981-1 986.
  • 10Nakwaski W,Osinski M. Thermal properties of etched-well surface-emitting semiconductor lasers[J]. IEEE J. Quantum Electron. , 1991, 27 (6): 1 391-1 401.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部