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铬掺杂对PZN-PZT陶瓷微观结构和电学性能的影响 被引量:1

Effects of Cr_2O_3 doping on microstructure and piezoelectric properties of 0.2PZN-0.8PZT ceramics
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摘要 研究了Cr2O3掺杂对0.2Pb(Zn1/3Nb2/3)O3-Pb(Ti0.5Zr0.5)O3(PZN-PZT)陶瓷结构和电学性能的影响。结果表明,Cr2O3掺杂量小于0.3wt%时,Cr2O3能引起三方-四方相变,四方相含量增加,晶粒尺寸和烧结密度上升;掺杂量高于0.3wt%时,Cr2O3掺杂能抑制晶粒长大并降低烧结密度。同时,Cr2O3掺杂表现出硬性掺杂特征:εr变小,Qm值增加。而tanδ,kp和d33随Cr2O3掺杂量增加而表现出极值特征。最佳的压电性能出现在Cr2O3掺杂量为0.3wt%处。 The effects of Cr2O3 addition on the microstructure and piezoelectric properties of 0.2Pb(Zn1/3 Nb2/3 )O3-Pb( Ti0. 5Zr0.5 ) 03 ( PZN-PZT) ceramics were investigated. When the concentration of Cr2O3 is below 0.3wt%, Cr2O3 doping results in the phase transition from rhombohedral to tetragonal phase, the increase of tetragonal phase, and the increase of grain sizes and bulk densities. However, when the concentration of Cr2O3 is above 0.3wt% , Cr2O3 will inhibit the grain growth and decrease the densities. Cr2O3 doping makes the materials harder, εr decreases, while Qm increases with the increase of Cr2O3 while the tanδ, kp and d33 exhibits a minimum or maximum value with the increase of Cr2O3 content. The most optimum piezoelectric properties can be obtained with the concentration of Cr2O3 0.3wt%.
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2005年第3期303-307,共5页 Journal of Functional Materials and Devices
基金 北京市教育委员会科技发展计划项目
关键词 铬掺杂 PZN-PZT 相结构 压电性能 Cr2O3-doping PZN-PZT phase structure piezoelectric property
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